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| (R) BCP52-16 LOW POWER PNP TRANSISTOR Ordering Code BCP52-16 s Marking BCP5216 s s s SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BCP55-16 2 1 SOT-223 2 3 APPLICATIONS MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS s OUTPUT STAGE FOR AUDIO AMPLIFIERS CIRCUITS s AUTOMOTIVE POST-VOLTAGE REGULATION s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V CER V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Collector-Emitter Voltage (R BE = 1K) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 o C Storage Temperature Max. Operating Junction Temperature Value -60 -60 -60 -5 -1 -1.5 -0.1 -0.2 1.4 -65 to 150 150 Unit V V V V A A A A W o o C C September 2003 1/4 BCP52-16 THERMAL DATA R thj-amb * Thermal Resistance Junction-Ambient 2 Max 89.3 o C/W * Device mounted on a PCB area of 1 cm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = -30 V V CB = -30 V I C = -100 A T j = 125 o C -60 Min. Typ. Max. -100 -10 Unit nA A V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CER Collector-Emitter Breakdown Voltage (R BE = 1 K) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain I C = -20 mA -60 V I C = -100 A -60 V V (BR)EBO I E = -10 A -5 V V CE(sat) V BE(on) h FE I C = -500 mA I C = -500 mA I C = -5 mA I C = -150 mA I C = -500 mA I B = -50 mA V CE = -2 V V CE = -2 V V CE = -2 V V CE = -2 V f = 20 MHz 40 100 25 50 -0.5 -1 V V 250 MHz fT Transition Frequency I C = -10 mA V CE = -5 V Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 BCP52-16 SOT-223 MECHANICAL DATA mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10o 0.130 0.264 TYP. MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 10o MIN. inch TYP. MAX. 0.071 0.031 0.122 0.013 0.264 DIM. P008B 3/4 BCP52-16 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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